Leakage current degradation in n-MOSFETs due to hot-electron stress
- 1 November 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 9 (11) , 579-581
- https://doi.org/10.1109/55.9282
Abstract
The field-induced drain-leakage current can become significant in NMOS devices with thin gate oxides. This leakage current component is found to be more prominent in devices with gate-drain overlap and can increase considerably with hot-electron stress. A method which shows how measuring the gate voltage needed to obtain a constant leakage value of 0.1 nA can yield useful information on the interface charge trap density is discussed.Keywords
This publication has 3 references indexed in Scilit:
- The impact of gate-induced drain leakage current on MOSFET scalingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Hot-carrier induced drain leakage current in n-channel MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Threshold-voltage instability in MOSFET's due to channel hot-hole emissionIEEE Transactions on Electron Devices, 1981