Recombination in a graded n-n+contact region in a narrow-gap semiconductor

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Abstract
The consequences of Auger recombination processes in a graded n-n+ contact in cadmium mercury telluride are computed and compared with a simplified analytic model to establish the equivalent surface recombination velocity of the contact. The major contribution is shown to derive from the relatively lightly doped regions of the contact, as the built-in barrier dominates the increasing recombination rate constant as the material becomes degenerate. The resulting recombination velocity is low (-1). To act as an efficient electrically reflecting contact, the material must become degenerate within 1 mu m of the beginning of the contact graded region.

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