Dielectric response functions of heavily doped zincblende semiconductors with finite particle lifetime

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Abstract
The dielectric response functions in the valence bands and in the conduction band of heavily doped zincblende semiconductors have been evaluated using the self‐consistent field method and incorporating the finite lifetime of particles in the relaxation time approximation. Scattering rates of injected electrons are calculated with the Born approximation in the dielectric response function formalism at finite temperature. The finite particle lifetime introduces significant modifications to the spectral density function {Im[−1/ε(q,ω)]} at small q, where collective excitations (i.e., coupled phonon‐plasmon modes) are heavily damped due to collisions. However, these modifications are small at large q. At the same time, the scattering rates of injected electrons are strongly affected by the temperature dependence of these effects, which are particularly significant for p‐type semiconductors.