Hole diffusion length measurements in discharge-produced aSi:H
- 1 January 1980
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 35-36, 387-390
- https://doi.org/10.1016/0022-3093(80)90625-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Optical and photoconductive properties of discharge-produced amorphous siliconJournal of Applied Physics, 1977
- Amorphous silicon solar cellsIEEE Transactions on Electron Devices, 1977
- Electronic properties of amorphous silicon in solar cell operationIEEE Transactions on Electron Devices, 1977