Laser-Induced Crystal Growth Measurements By Time-Resolved Optical Reflectivity

Publisher Website
Google Scholar
Abstract
A recently developed optical reflectivity technique for monitoring laser-induced solid phase epitaxial crystal growth in real time is described, and examples which illustrate its use in studies of solid-state kinetics in ion-implanted and UHV-deposited films are presented. Data which show the dependence of epitaxial growth rate on the position of the crystal/amorphous interface, growth rate as a function of temperature, and deviations from ideal epitaxial growth due to competing crystallization processes are presented and discussed. The laser technique represents a significant advance in experimental capabilities for measuring details of solid phase epitaxy kinetics; crystallization rates can be accurately measured at higher temperatures, and with greater temporal and spatial resolution than had been previously possible.

This publication has 0 references indexed in Scilit: