L-band 100-watts push-pull GaAs power FET
- 27 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 703-706 vol.2
- https://doi.org/10.1109/mwsym.1998.705088
Abstract
Over 100 W GaAs FET based device was developed. Using the push-pull configuration, this L-band high power GaAs MESFET achieved an output power of 102 W (50.1 dBm), 11.0 B power gain and 47% power added efficiency with drain-source voltage of 10 V at 2.2 GHz. In addition, operating with the drain-source voltage of 12 V, an output power of 125 W (51 dBm) was obtained. The developed FET will contribute to improve the performance of the SSPAs used in various base-station systems that require higher output power and low distortion.Keywords
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