Reactor analysis of copper indium selenization
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 529-534 vol.1
- https://doi.org/10.1109/pvsc.1990.111678
Abstract
A preliminary process analysis of selenization of copper/indium (Cu/In) bilayers in a flowing H/sub 2/Se reactor has been completed. The analysis includes evaluations of heat treatments of Cu/In bilayers and of the relationship between the composition and structure of the bilayer and the resultant CuInSe/sub 2/ film, and an investigation of selenization reaction kinetics, including comparisons between the reaction of H/sub 2/Se with bilayers and with single copper and indium layers. X-ray diffraction (XRD), energy dispersive spectroscopy (EDS), atomic absorption spectrophotometry (AA), and scanning electron (SEM) and optical microscopy have been used to study the selenization process. CuInSe/sub 2//(CdZn)S devices were also used to evaluate the quality of the CuInSe/sub 2/ films. Devices with efficiencies greater than 10% have been fabricated.<>Keywords
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