Nitrogen concentration in GaP measured by optical absorption and by proton-induced nuclear reactions
- 1 May 1974
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 45 (5) , 2191-2200
- https://doi.org/10.1063/1.1663567
Abstract
A method is described for the determination of the nitrogen concentration in GaP crystals from optical absorption measurements. The method has been calibrated by measuring the absolute nitrogen concentration by nuclear reaction quantitative analysis in the same samples for which the optical absorption was measured. The relationships between the nitrogen concentration, the integrated absorption of the A line (2.3172 eV), and the optical absorption at Ax (2.3275 eV) at 4.2°K are given by [N] cm−3=8.5×1014∫αA d E=3.4 ×1016αAx, where α is measured in cm−1 and d E in meV. Previous formulas which have commonly been used to determine the nitrogen concentration in terms of optical absorption overestimate the nitrogen concentration by about a factor of 5. Also the application of these formulas has varied between laboratories. Section I describes the determination of nitrogen concentrations by nuclear microanalysis. Measurements have been made in the range from to in GaP grown by the liquid encapsulated Czochralski process in a nitrogen‐pressurized crystal puller and in nitrogen‐doped GaP grown by liquid phase epitaxy at [inverted lazy s]1000°C. Two distinct charged‐particle techniques have been employed. In crystals containing nitrogen of normal isotopic composition, the 14N concentration was determined by proton activation using the reaction 14N(p,α)11C with proton energies in the range 6–10 MeV. The reaction product, 11C, was chemically separated after irradiation. The 11C is a positron emitter, and the γ rays from the positron annihilation were measured. Boron interference through the reaction 11B(p,n)11C was independently determined by measuring the prompt α‐particle emission from the reaction 11B(p,α1)8Be*→2α2 during irradiation with 685‐keV protons. In 15N‐doped LPE layers, the 15N concentration was determined by measuring the prompt α‐particle emission from the reaction 15N(p,α)12C during irradiation with 685‐keV protons. Section II describes the optical absorption measurements and the correlation with the nuclear measurements. The temperature dependence of the integrated absorption and the line shape of the A line have also been measured. For determination of the nitrogen concentration, the A‐line absorption measurements should be made at a temperature at which the absorption line shape is amenable to accurate integration. The integrated absorption can then be corrected to its value at 4.2°K and the nitrogen concentration calculated from the above relationship.
This publication has 11 references indexed in Scilit:
- Determination of Boron and Oxygen Surface Contamination due to Common Solvents by Nuclear MicroanalysisJournal of the Electrochemical Society, 1974
- Nuclear microanalysis of oxygen concentration in liquid-phase epitaxial gallium phosphideJournal of Applied Physics, 1973
- Boron and nitrogen im gallium phosphide grown by the liquid encapsulated czochralski processJournal of Electronic Materials, 1972
- Anomalous Behavior of Nitrogen in Pulled GaP CrystalsJournal of Applied Physics, 1971
- Properties of GaP Single Crystals Grown by Liquid Encapsulated PullingJournal of the Electrochemical Society, 1971
- Pulling of gallium phosphide crystals by liquid encapsulationJournal of Crystal Growth, 1968
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967
- The Radioactivation Analysis of Semiconductor Graphite for Nitrogen by the 14N(p, α)11C ReactionBulletin of the Chemical Society of Japan, 1966
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review B, 1966
- Theory and Experiment in Rapid, Sensitive Helium-3 Activation Analysis. Helium-3 Reactions as Neutron SourcesAnalytical Chemistry, 1965