Profile control of SiH radicals by cross magnetic field in plasma processing
- 11 May 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (19) , 1322-1324
- https://doi.org/10.1063/1.97894
Abstract
The distributions of optical emission intensity along the discharge axis in multiple‐parallel‐plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time‐averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH* was possible by varying the field strength. The emission intensity of SiH* was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large‐area substrate outside the multielectrodes uniform and can enhance the deposition rate.Keywords
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