Quadrupole interaction of 111Cd in the semiconductor CdS

Abstract
The time differential perturbed angular correlation technique was applied to study the electric quadrupole coupling of 111Cd in the II‐VI semiconductor CdS (20 K≤T≤1000 K). Two kinds of sample preparation were used: implantation and diffusion. Obtained results for the regular lattice sites were independent of the preparation. The measured electric field gradient (EFG) was between 6.7±0.4 MHz and 9.1±0.2 MHz. Data were confirmed by point‐charge calculations. Implantation however caused a second EFG (≊78 MHz) that was assigned to a defect due to the preceding irradiation.

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