Mobility enhancement via volume inversion in double-gate MOSFETs
- 1 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2001?3 (1078621X) , 153-154
- https://doi.org/10.1109/soi.2003.1242934
Abstract
In this paper, we describe the mobility enhancement via moderate as well as strong volume inversion, in asymmetrical DG (ADG) as well as SDG MOSFETs.Keywords
This publication has 4 references indexed in Scilit:
- Analytical modeling of quantization and volume inversion in thin Si-film DG MOSFETsIEEE Transactions on Electron Devices, 2002
- On the mobility versus drain current relation for a nanoscale MOSFETIEEE Electron Device Letters, 2001
- Surface roughness at the Si–SiO2 interfaces in fully depleted silicon-on-insulator inversion layersJournal of Applied Physics, 1999
- Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performanceIEEE Electron Device Letters, 1987