New ultra-high density textured Poly-Si floating gate EEPROM cell

• 1 January 1986
• conference paper
• Published by Institute of Electrical and Electronics Engineers (IEEE)
• p. 826-828
• https://doi.org/10.1109/iedm.1986.191326

Abstract

Keywords

• EPROM
• TUNNELING
• NONVOLATILE MEMORY
• VOLTAGE
• DIELECTRICS
• ELECTRONS
• EQUIVALENT CIRCUITS
• ANODES
• ELECTRODES
• FUNCTIONAL PROGRAMMING