Measurement of thermal and packaging limitations in LDMOSFETs for RFIC applications
- 27 November 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 160-164
- https://doi.org/10.1109/imtc.1998.679746
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- A new large-signal model based on pulse measurement techniques for RF power MOSFETPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A circuit simulation model for high-frequency power MOSFETsIEEE Transactions on Power Electronics, 1991