Crystal Growth and Neutral-Acceptor Bound-Exciton Emission of ZnCdTe by THM with Te Solvent
- 16 June 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 77 (2) , K115-K119
- https://doi.org/10.1002/pssa.2210770256
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Growth and characterization of Cd1−xMnxTe and MnTe crystals; contribution to the CdTe-MnTe pseudo-binary phase diagram determinationJournal of Crystal Growth, 1981
- Annealing Behavior of Oxygen‐Bound Exciton in Electron‐Irradiated ZnTePhysica Status Solidi (b), 1981
- Growth of high-purity ZnTe single crystals by the sublimation travelling heater methodJournal of Crystal Growth, 1978
- Growth by Travelling Heater Method and Chracteristic of Undoped High-Resistivity CdTeJapanese Journal of Applied Physics, 1978
- Excitons in semiconducting alloysPhysical Review B, 1974