Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal–semiconductor field effect transistors
- 1 November 1993
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 11 (6) , 2016-2020
- https://doi.org/10.1116/1.586536
Abstract
No abstract availableKeywords
This publication has 0 references indexed in Scilit: