Design and optimisation of CMOS wideband amplifiers
- 1 January 1989
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Several CMOS amplifier types are compared and optimized for high-frequency applications. Scaling laws are derived for the power consumption as a function of the gain bandwidth, the load capacitance and the second pole. It is shown that minor modifications on existing circuits can save over a factor of two of power consumption. A 3-μm wideband amplifier is presented with 150-MHz gain-bandwidth and 60° phase margin and with 30 mW of power consumption for a load capacitance of 2 pFKeywords
This publication has 4 references indexed in Scilit:
- Large-signal linearity of scaled MOS transistorsIEEE Journal of Solid-State Circuits, 1987
- A small signal dc-to-high-frequency nonquasistatic model for the four-terminal MOSFET valid in all regions of operationIEEE Transactions on Electron Devices, 1985
- Current gain high-frequency CMOS operational amplifiersIEEE Journal of Solid-State Circuits, 1985
- CMOS analog integrated circuits based on weak inversion operationsIEEE Journal of Solid-State Circuits, 1977