New Method for Studying Surface and Interface Structures Using Kossel Lines

Abstract
The angular dependence of Kossel lines from Ge single crystals excited by monochromatized synchrotron radiation was measured precisely in the double-crystal arrangement where the first crystal acts as a sample and the second as an analyzer. The Kossel line profiles showed surface sensitivifies when the excitation beam was incident on the crystal surface at a small angle or when its wavelength was slightly shorter than the absorption edge of Ge. The profiles were compared with the calculations based on the dynamical theory using the reciprocity theorem. The relationship with the X-ray standing wave method was clarified.

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