Mechanism of Schottky barrier formation: The role of amphoteric native defects

• 1 July 1987
• journal article
• Published by American Vacuum Society in Journal of Vacuum Science & Technology B
• Vol. 5  (4) , 1062-1067
• https://doi.org/10.1116/1.583729

Abstract

Keywords

• CRYSTAL STRUCTURE
• ARSENIC
• SATISFIABILITY
• SEMICONDUCTOR DEVICES
• PHYSICAL PROPERTIES
• ENERGY LEVELS
• SCHOTTKY BARRIER