Oxidation stages of clean and H-terminated Si(001) surfaces at room temperature

This publication has 16 references indexed in Scilit:

• The interaction of molecular and atomic oxygen with Si(100) and Si(111)
  Surface Science Reports, 1993
• Direct measurement of reaction kinetics for the decomposition of ultrathin oxide on Si(001) using scanning tunneling microscopy
  Physical Review Letters, 1992
• Direct observation of the layer-by-layer growth of initial oxide layers on Si(100) surface during thermal oxidation
  Physical Review Letters, 1991
• Kinetics of the adsorption of O2 and of the desorption of SiO on Si(100): A molecular beam, XPS, and ISS study
  Surface Science, 1987
• Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2
  Surface Science, 1987
• On the oxidation of III–V compound semiconductors
  Surface Science, 1986
• The energy dependence of electron attenuation lengths
  Surface and Interface Analysis, 1985
• Dissociative chemisorption of H2O on Si(100) and Si(111) - a vibrational study
  Solid State Communications, 1982
• Theory of the oxidation of metals
  Reports on Progress in Physics, 1949
• The theory of the formation of protective oxide films on metals.—III
  Transactions of the Faraday Society, 1947