RF power transistor metallization failure
- 1 September 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 17 (9) , 800-803
- https://doi.org/10.1109/t-ed.1970.17077
Abstract
RF power transistors employing aluminum metallization can degrade and fail when the aluminum carries high-current densities at elevated temperatures. Two distinct mechanisms promoted by electromigration lead to failure. These are 1) the growth of etch pits filled with aluminum which penetrate and short the emitter-base junctions and 2) a reconstruction of the metallization which increases the electrical resistance reducing the device efficiency.Keywords
This publication has 0 references indexed in Scilit: