Electronic structure of rare-earth pnictides
- 15 February 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (8) , 4324-4339
- https://doi.org/10.1103/physrevb.53.4324
Abstract
The results of first-principles calculations of the electronic band structures, equilibrium lattice constants, cohesive energies, bulk moduli, and magnetic moments are presented for the rare-earth pnictides with the rocksalt structure and chemical formula R-V, where R=Gd, Er, and the group-V elements N, P, and As. The linear-muffin-tin-orbital method was used in the atomic sphere approximation. The 4f states were treated as localized corelike states with fixed spin occupancies. Justifications for this procedure are presented. The systems were studied with the 4f spins on all rare-earth ions aligned (ferromagentic phase) and with the spins randomly oriented (paramagentic phase). Within the local spin-density approximation, all systems studied were found to be semimetallic with a hole section of the Fermi surface near Γ and electron section near X. The nitrides, however, have a nearly zero band-gap overlap. We estimated quasiparticle self-energy corrections using an approach previously used for semiconductors. With these corrections, GdN is found to be a semiconductor in the paramagnetic phase and a semimetal in the ferromagnetic phase. ErN, on the other hand, is found to be a semiconductor in both phases. All systems correspond to a trivalent state of the rare-earth element and are characterized by ionic bonding. The results for the lattice constants and the qualitative conclusion about the semimetallic nature are in agreement with experimental data and with the previous calculations for Gd-pnictides. For ErAs, the calculated magnetic exchange splittings, electron and hole concentrations, Fermi-surface cross-sectional areas, and cyclotron masses are in satisfactory agreement with the available Shubnikov–de Haas data on As when account is taken of the differences due to the presence of Sc and of the self-energy corrections to the local-density approximation. © 1996 The American Physical Society.
Keywords
This publication has 47 references indexed in Scilit:
- Growth of YbSb2/GaSb(001) and GaSb/YbSb2/GaSb(001) heterostructures by molecular beam epitaxyJournal of Applied Physics, 1993
- Ion channeling study of Scx(Yb,Er)1−xAs films on GaAs (001)Journal of Applied Physics, 1993
- Epitaxial growth and characterization of lattice-matched GaAs⧸Scx(Yb, Er)1-xAs⧸GaAs heterostructures and [Sc0.2Yb0.8As, Sc0.3Er0.7As] superlatticesJournal of Crystal Growth, 1993
- Spin superlattice formation in ZnSe/Se multilayersPhysical Review Letters, 1991
- Band structure, quantum confinement, and exchange splitting in As epitaxial layers buried in GaAsPhysical Review B, 1991
- Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a GSMBE systemJournal of Crystal Growth, 1990
- Growth of matched metallic ErP0.6As0.4 layers on GaAs in a molecular beam epitaxy systemApplied Physics Letters, 1989
- ErAs epitaxial layers buried in GaAs: Magnetotransport and spin-disorder scatteringPhysical Review Letters, 1989
- Epitaxial growth of ErAs on (100)GaAsApplied Physics Letters, 1988
- Neutron Diffraction Investigation of the Magnetic Properties of Compounds of Rare-Earth Metals with Group V AnionsPhysical Review B, 1963