Accuracy in X-ray rocking-curve analysis as a necessary requirement for revealing vacancies and interstitials in regrown silicon layers amorphized by ion implantation
- 1 April 1988
- journal article
- Published by International Union of Crystallography (IUCr) in Journal of Applied Crystallography
- Vol. 21 (2) , 176-181
- https://doi.org/10.1107/s0021889887011233
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