High-speed operation of 1.5μm GaInAsP/InP optoelectronic integrated laser drivers
- 14 April 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (8) , 467-468
- https://doi.org/10.1049/el:19880316
Abstract
A 1.5μm-wavelength high-speed self-aligned constricted-mesa laser diode and an InP MESFET have been integrated monolithically without deterioration in the performance of either device, by using a gate projection process. A broad 3dB bandwidth of 6.6GHz was demonstrated for the first time.Keywords
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