Ab initio calculation of the atomic and electronic structure for the clean 3C SiC(110) 1 × 1 surface
- 20 April 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 307-309, 989-994
- https://doi.org/10.1016/0039-6028(94)91529-6
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Atomic relaxation in silicon carbide polytypesJournal of Physics: Condensed Matter, 1990
- Total energy calculations on zinc sulphide polytypesJournal of Physics: Condensed Matter, 1990
- Analytical treatment of band-gap underestimates in the local-density approximationPhysical Review B, 1988
- Ground State and Electronic Properties of Silicon Carbide and Boron NitridePhysica Status Solidi (b), 1988
- Inter-layer interactions and the origin of SiC polytypesJournal of Physics C: Solid State Physics, 1988
- Ground-state properties of wurtzite silicon carbideSolid State Communications, 1988
- Confirmation of an ANNNI-Like Model for Polytypism in SiCEurophysics Letters, 1987
- Ground-state properties of polytypes of silicon carbidePhysical Review B, 1986
- Energy Band Structures of Four Polytypes of Silicon Carbide Calculated with the Empirical Pseudopotential MethodPhysica Status Solidi (b), 1970
- Optical Properties of Cubic SiC: Luminescence of Nitrogen-Exciton Complexes, and Interband AbsorptionPhysical Review B, 1964