Transient currents in a-Si:H n+-i-n+ devices
- 1 December 1983
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 59-60, 1183-1186
- https://doi.org/10.1016/0022-3093(83)90379-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Alternating space-charge-limited currents in hydrogenated amorphous siliconSolid State Communications, 1983
- The density of states in amorphous silicon determined by space-charge-limited current measurementsPhilosophical Magazine Part B, 1982
- Space-charge limited conduction in n+n n+ amorphous hydrogenated silicon filmsJournal of Applied Physics, 1982
- The optimization of metal—Insulator—Metal nonlinear devices for use in multiplexed liquid crystal displaysIEEE Transactions on Electron Devices, 1981
- Space-Charge-Limited Currents in SolidsPhysical Review B, 1955
- Space-Charge-Limited Currents in Single Crystals of Cadmium SulfidePhysical Review B, 1955