GaAs Shallow-homojunction solar cells on Ge-coated Si substrates

1 July 1981

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 2 (7) , 169-171
https://doi.org/10.1109/EDL.1981.25386

Abstract

Solar cells with conversion efficiencies of 12% (AM1) have been fabricated from single-crystal GaAs epilayers grown by CVD on Ge-coated Si substrates. The cells utilize an n+/p/p+shallow-homo junction GaAs structure on a thin (<0.2 µm) epitaxial Ge layer. These solar cells are the first reported GaAs devices fabricated on Si substrates.

Keywords

GALLIUM ARSENIDE
PHOTOVOLTAIC CELLS
SUBSTRATES
FABRICATION
COSTS
LATTICES
VOLTAGE
CHEMICAL VAPOR DEPOSITION
SHEET MATERIALS
CIRCUITS