Double-heterostructure optoelectronic switch as a single quantum well laser
- 2 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14) , 1308-1310
- https://doi.org/10.1063/1.102503
Abstract
The double‐heterostructure optoelectronic switch (DOES) is demonstrated as an N‐channel, single quantum well, graded index laser. As a broad‐area device, the DOES exhibits excellent electrical switching characteristics of 12 V and 0.04 A cm−2 at the switching condition and 1.8 V and 3.3 A cm−2 at the holding condition with 8.4×10−4 Ω cm2 on state resistance. As a laser, threshold current densities down to 580 A/cm2, loss of 11 cm−1, slope efficiency of 0.35 mA/mW, and total power conversion efficiency of 45% were obtained.Keywords
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