Decomposition of N2O on the Si(100)2 × 1 and Si(111)7 × 7 surfaces: Determination of the density of broken bonds
- 1 June 1989
- journal article
- Published by Elsevier in Surface Science
- Vol. 216 (1-2) , L337-L341
- https://doi.org/10.1016/0039-6028(89)90634-1
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Tunneling microscopy of Ge(001)Physical Review B, 1987
- Adsorption of atomic oxygen (N2O) on a clean Si(100) surface and its influence on the surface state density; A comparison with O2Surface Science, 1987
- An investigation of the interaction of N2O with the Si(111)−7 × 7 surface using AES and optical reflectometry; A comparison with O2Surface Science, 1985
- Probing valence states with photoemission and inverse photoemissionJournal of Vacuum Science & Technology A, 1984
- Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfacesSurface Science, 1980
- Surface states in Si(111)2×1 and Ge(111)2×1 by optical reflectivitySolid State Communications, 1980
- Reflectometric study of dangling-bond surface states and oxygen adsorption on the clean Si(111)7 × 7 surfaceSurface Science, 1979
- Ellipsometric studies of adsorption reactions on clean surfacesSurface Science, 1976
- Surface-state densities on clean semiconductor surfaces measured by ellipsometryPhysical Review B, 1974
- Ellipsometry and the clean surfaces of silicon and germaniumSurface Science, 1971