Broadband high-power TRAPATT diode amplifier at S band
- 30 December 1971
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 7 (26) , 778-779
- https://doi.org/10.1049/el:19710531
Abstract
This letter describes the use of a coupled TEM line circuit with high-power high-efficiency silicon avalanche diodes to achieve broadband pulsed amplification in S band. An output power of 50 W, with 6 dB gain and 10% instantaneous 3 dB bandwidth centred at 2.7 GHz, has been obtained.Keywords
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