Correspondence

• 1 April 1954
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IRE
• Vol. 42  (4) , 760
• https://doi.org/10.1109/JRPROC.1954.274709

Abstract

Keywords

• SILICON
• P-N JUNCTIONS
• RECTIFIERS
• TEMPERATURE
• CONDUCTIVITY
• SEMICONDUCTIVITY
• BREAKDOWN VOLTAGE
• CONTACTS
• IMPURITIES
• LIGHTNING