Cd-Doping in InxGa1-xAsyP1-y Mixed Semiconductors Grown by Liquid-Phase Epitaxy
- 1 December 1981
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 20 (12) , L889
- https://doi.org/10.1143/jjap.20.l889
Abstract
The doping characteristics and electrical properties of Cd-doped p-type In0.75Ga0.25As0.55P0.45 grown by a LPE method have been investigated. The distribution coefficient of Cd was about 3–4×10-3. The activation energy of the Cd acceptor level is between 4.2 and 13.7 meV, depending on the doping concentration employed. In n-InP/p-InGaAsP heterojunctions using Cd as a p-type dopant, the displacement of the junction position was barely observable. The minority carrier (electron) diffusion length in the p-type region with a hole concentration of 1×1018 cm-3 was estimated around 2.8 µm.Keywords
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