Auger crater-edge profiling of multilayer thin films by scanning Auger spectroscopy

Abstract
Multilayer Tb/Si thin films and AlAs/GaAs semiconductorsuperlatticethin films have been examined using an Auger crater‐edge profiling technique. The data show that the true thickness of layers (in length rather than sputtering times) and differential sputtering ratios for different materials can be rapidly determined from the crater‐edge profiles.

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