DIFFUSION OF ELECTRONS IN SILICON TRANSVERSE TO A HIGH ELECTRIC FIELD
- 1 March 1970
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 16 (5) , 191-194
- https://doi.org/10.1063/1.1653157
Abstract
A new method for directly measuring diffusion coefficients transverse to a high electric field has been applied to electrons in silicon at 300°K. For fields ranging up to 24 kV/cm, the transverse diffusion coefficient, as measured and determined by Monte Carlo calculation, indicates a drop from the zero field value D0 to approximately D0/2. The present results are subject to some uncertainty, but improved resolution appears to be attainable with maximum use of present technology.Keywords
This publication has 4 references indexed in Scilit:
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- Calculation of the hot electron diffusion rate for GaAsPhysics Letters A, 1969
- High-field energy distribution and diffusion coefficients for heavy holes in p-germaniumPhysics Letters A, 1969
- Transport Properties of GaAsPhysical Review B, 1968