Spin relaxation in GaAs quantum dots
- 16 March 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 69 (11) , 115318
- https://doi.org/10.1103/physrevb.69.115318
Abstract
The spin-relaxation time due to the electron-acoustic phonon scattering in GaAs quantum dots is studied after the exact diagonalization of the electron Hamiltonian with the spin-orbit coupling. Different effects such as the magnetic field, the quantum dot size, and the temperature on the spin-relaxation time are investigated in detail. Moreover, we show that the perturbation method widely used in the literature is inadequate in accounting for the electron structure and therefore the spin-relaxation time.Keywords
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This publication has 13 references indexed in Scilit:
- Electronic spin precession in semiconductor quantum dots with spin-orbit couplingPhysical Review B, 2002
- Long dephasing time and high-temperature conductance fluctuations in an open InGaAs quantum dotPhysical Review B, 2002
- Spin relaxation in quantum dotsPhysical Review B, 2002
- Quantum Dots with Rashba Spin-Orbit CouplingPhysical Review Letters, 2002
- Spin-flip transitions between Zeeman sublevels in semiconductor quantum dotsPhysical Review B, 2001
- Spin-orbit splitting in semiconductor quantum dots with a parabolic confinement potentialPhysical Review B, 2001
- Spin-dephasing processes in semiconductor quantum dotsPhysica E: Low-dimensional Systems and Nanostructures, 2000
- Directional effects of heavy-ion irradiation in Tb/Fe multilayersPhysical Review B, 2000
- Effect of nickel and zinc substitutions on the electronic charge-density redistribution in asuperconductorPhysical Review B, 1999
- Weak antilocalization and spin precession in quantum wellsPhysical Review B, 1996