Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs
- 1 June 1990
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 103 (1-4) , 367-370
- https://doi.org/10.1016/0022-0248(90)90213-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Deep levels in InxGa1-xAsyP1-ygrown on (100) GaAs by LPESemiconductor Science and Technology, 1989
- Effect of lattice mismatch between epitaxial layer and substrate on immiscibility of InGaAsP/GaAs LPE layersJournal of Crystal Growth, 1988
- Degradation of III–V Opto‐Electronic DevicesJournal of the Electrochemical Society, 1988
- Photoluminescent and electrical properties of InGaPAs mixed crystals liquid phase epitaxially grown on (100) GaAsJournal of Applied Physics, 1983
- Role of dangling bonds and antisite defects in rapid and gradual III-V laser degradationApplied Physics Letters, 1982
- Théorie des niveaux profonds de lacunes dans In1-yGayAs 1-xPxJournal de Physique, 1982