The excitonic properties and temperature behaviour of the photoluminescence from GaAs-GaAlAs multiple quantum well structures
- 1 March 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 61 (11) , 707-711
- https://doi.org/10.1016/0038-1098(87)90721-6
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Room-temperature photoluminescence times in a GaAs/AlxGa1−xAs molecular beam epitaxy multiple quantum well structureApplied Physics Letters, 1985
- Free excitons in room-temperature photoluminescence of GaAs-multiple quantum wellsPhysical Review B, 1983
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Intrinsic radiative recombination from quantum states in GaAs-AℓxGa1−xAs multi-quantum well structuresSolid State Communications, 1981
- Luminescence studies of optically pumped quantum wells in GaAs-multilayer structuresPhysical Review B, 1980