GaAs HBT LSI/VLSI Fabrication Technology

1 October 1987

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 109-112
https://doi.org/10.1109/gaas.1987.10399593

Abstract

Bipolar HIZL technology has been developed for fabrication of LSI/VLSI circuits with high yields. Using MOCVD epi deposition technique, defects levels of 2000 volts, full temperature operation and high radiation hardness including SEU.

Keywords

LOGIC GATES
GALLIUM ARSENIDE
MICROMETERS
METALS
RELIABILITY
HETEROJUNCTION BIPOLAR TRANSISTORS
MESFETS

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