Facet degradation and passivation of InGaAsP/InP lasers
- 1 July 1982
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 41 (1) , 18-21
- https://doi.org/10.1063/1.93322
Abstract
Formation of oxide on mirror facets was observed by Auger electron spectroscopy in InGaAsP/ InP buried heterostructure lasers. The oxide on the mirror facets caused increase of threshold current and leakage current, and decrease of differential quantum efficiency. Such phenomena were observed under nonlasing high current density operation as well as under high optical output power operation. The degradation of lasers due to the mirror facet oxidation is shown to be suppressed by coating the mirror facet with Al2O3.Keywords
This publication has 9 references indexed in Scilit:
- Reliability of InGaAsP/InP Buried Heterostructure LasersJapanese Journal of Applied Physics, 1982
- Degradation of InGaAsP/InP DH Lasers in Water due to Facet DeteriorationJapanese Journal of Applied Physics, 1980
- Buried Stripe GaInAsP/InP DH Laser Prepared by Using Meltback MethodJapanese Journal of Applied Physics, 1978
- Degradation of (AlGa)As DH lasers due to facet oxidationApplied Physics Letters, 1978
- Effects of facet coatings on the degradation characteristics of GaAs-Ga1−xAlxAs DH lasersApplied Physics Letters, 1977
- Auger analysis of the anodic oxide/InP interfaceJournal of Vacuum Science and Technology, 1977
- Long-term degradation of GaAs-Ga1−xAlxAs DH lasers due to facet erosionJournal of Applied Physics, 1977
- Al2O3 half-wave films for long-life cw lasersApplied Physics Letters, 1977
- Influence of device fabrication parameters on gradual degradation of (AlGa)As cw laser diodesApplied Physics Letters, 1974