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First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processes
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First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processes
First anodic-oxide GaAs m.o.s.f.e.t.s based on easy technological processes
BB
B. Bayraktaroglu
B. Bayraktaroglu
EK
E. Kohn
E. Kohn
HH
H.L. Hartnagel
H.L. Hartnagel
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22 January 1976
journal article
Published by
Institution of Engineering and Technology (IET)
in
Electronics Letters
Vol. 12
(2)
,
53-54
https://doi.org/10.1049/el:19760043
Abstract
It is shown that a new technology results in the first native-oxide m.o.s.f.e.t.s. Their electrical behaviour is described.
Keywords
ANODIC OXIDE GAAS MOSFETS
ELECTRICAL BEHAVIOUR
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