Electron-beam-delineated X-band silicon transistor

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Abstract
An X-band silicon power transistor has been used to develop and demonstrate electron-beam lithography in a multilevel device with submicron geometries. The importance of an automatic registration system capable of submicron precision will be discussed. The difficulties of processing submicron geometries once they have been defined in resist and the means of addressing these problems will be reported. Dry etch processes such as plasma etch and ion milling have definite advantages. The benefits in resolution and registration of direct slice writing with an electron beam are, of course, offset in some degree by the reduced throughput caused by serial patterning. Therefore, a hybrid approach was taken, using the e beam only for the three levels in which its superior resolution and registration are critical. Photomasks are used for three noncritical levels. Comparison with a completely photolithography-defined device will be made to show the advantages in performance and yield of the e-beam device. A single-cell e-beam-generated transistor with 1/2-μm emitters has demonstrated a significant advancement in the state of the art: 230 mW cw amplifier output power with 6.7 dB gain and 25% collector efficiency (20% power added efficiency) at 10 GHz.

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