Model calculations for halogen-etching of GaAs and InSb. Potential-energy surfaces for GaAs+Cl, GaAs+Br, InSb+Cl, and InSb+Br reactions
- 1 October 1991
- journal article
- Published by AIP Publishing in The Journal of Chemical Physics
- Vol. 95 (7) , 4905-4913
- https://doi.org/10.1063/1.461706
Abstract
No abstract availableKeywords
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