Recent progress of high power laser diodes for EDFA pumping
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 20-22
- https://doi.org/10.1109/ofc.1999.767780
Abstract
We review the state-of-the-art of both 980-nm and 1480-nm lasers for erbium-doped fiber amplifier (EDFA) pumping. High coupled power >200 mW as well as high reliability operation can support a dense wavelength-division multiplexed network. We demonstrate high-power EDFA with multipumping length-stabilized pump modules.Keywords
This publication has 3 references indexed in Scilit:
- 980-nm aluminum-free InGaAs/InGaAsP/InGaP GRIN-SCH SL-QW lasersIEEE Journal of Quantum Electronics, 1994
- Extremely high power 1.48 /spl mu/m GaInAsP/InP GRIN-SCH strained MQW lasersIEEE Photonics Technology Letters, 1994
- Single-mode InGaAs-GaAs laser diodes operating at 980 nmElectronics Letters, 1991