Fast and dense low-power multiple-valued I 2 L circuit
- 27 August 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (18) , 968-970
- https://doi.org/10.1049/el:19870681
Abstract
A fast and dense low-power multiple-valued I2L circuit that can be made in a standard Schottky process with double-layer metallisation is proposed. The circuit consists of pnp and npn current mirrors. Schottky diodes and a normally operated threshold npn transistor with a merged pnp transistor to clamp the npn transistor and prevent the npn from going too deeply into saturation. Propagation delay times below 1 ns can be obtained.Keywords
This publication has 0 references indexed in Scilit: