Shaped Electroluminescent GaAs Diodes
- 1 April 1964
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (4) , 1153-1155
- https://doi.org/10.1063/1.1713583
Abstract
Electroluminescent GaAs diodes have been shaped as truncated cones with the p‐n junction at the apex to direct a large fraction of the radiation toward the base of the cone within the critical angle for transmission. Devices having an efficiency at 77°K of 8% have been fabricated. Efficiency is defined here as the radiant power out the base per unit electrical power input. It is calculated that improved devices of this type will have efficiencies of about 18%.This publication has 4 references indexed in Scilit:
- QUANTUM EFFICIENCY OF GaAs INJECTION LASERSApplied Physics Letters, 1963
- SEMICONDUCTOR MASER OF GaAsApplied Physics Letters, 1962
- Coherent Light Emission From GaAs JunctionsPhysical Review Letters, 1962
- CorrespondenceProceedings of the IRE, 1962