4,308V, 20.9 mΩ-cm2 4H-SiC MPS Diodes Based on a 30μm Drift Layer

• 15 June 2004
• journal article
• Published by Trans Tech Publications, Ltd. in Materials Science Forum
• Vol. 457-460, 1109-1112
• https://doi.org/10.4028/www.scientific.net/msf.457-460.1109

Abstract

Keywords

• 4H-SIC
• MPS DIODE
• PIN DIODE
• SCHOTTKY DIODE