Abstract
The Mott and Gurney law, which expresses the space-charge-limited current in intrinsic material, cannot be used for planar structures. An I/V curve is plotted for a quasi-intrinsic material. For a doped substrate, the I/V curve is simply displaced by ΔV. In a planar structure, the s.c.l.c. between two n layers, across the p substrate, can be lowered by biasing the substrate.

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