An efficient numerical method for the small-signal AC analysis of MOS capacitors
- 1 September 1977
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 24 (9) , 1137-1147
- https://doi.org/10.1109/T-ED.1977.18897
Abstract
A numerical method for the small-signal ac analysis of MOS capacitors is presented. The equations describing device operation, which comprise a boundary value problem, are formulated as an initial value problem and are solved by a shooting method. This results in a numerically stable and efficient algorithm for their solution. The recognized ill-conditioning of the boundary value problem, manifesting itself in numerical instabilities in the conductance-voltage characteristics of MOS capacitors is addressed. Calculated small-signal ac admittance as a function of gate bias for homogeneously doped and ion-implanted devices is shown. The high- "and low-frequency" positional dependence of convection and displacement current densities is determined.Keywords
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