Simulation of compound semiconductor devices using a scattering matrix approach
- 1 May 1994
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 9 (5S) , 862-864
- https://doi.org/10.1088/0268-1242/9/5s/125
Abstract
The scattering matrix approach (SMA) is a new technique for solving the space-dependent Boltzmann equation in semiconductor devices. In this paper we apply the SMA to examine electron transport in a simple AlGaAs/GaAs heterojunction bipolar transistor. The results demonstrate that the scattering matrix approach resolves off-equilibrium transport with the accuracy of a Monte Carlo simulation while also treating near-equilibrium transport and injection across high-energy barriers. These results establish the viability of the SMA for simulating carrier transport in advanced, compound semiconductor devices.Keywords
This publication has 6 references indexed in Scilit:
- Formulation of the Boltzmann equation in terms of scattering matricesSolid-State Electronics, 1993
- Breakdown-speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designsIEEE Transactions on Electron Devices, 1992
- Does velocity overshoot reduce collector delay time in AlGaAs/GaAs HBTs?IEEE Electron Device Letters, 1991
- A scattering matrix approach to device simulationSolid-State Electronics, 1990
- Monte carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effectsPhysical Review B, 1988
- AN EFFICIENT TECHNIQUE FOR TWO‐DIMENSIONAL SIMULATION OF VELOCITY OVERSHOOT EFFECTS IN Si AND GaAs DEVICESCOMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, 1982