Control of pattern dimensions in electron lithography

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Abstract
In electron lithographic processes pattern dimensions are distorted by ’’proximity’’ and ’’size’’ effects due to the action of backscattered electrons. This presents the mask designer with the problem of controlling these dimensions during the mask fabrication process so that the required patterns can be produced on the final substrate. This paper describes the processing of a resolution pattern, minimum geometry 0.5 μm, as it passes through the various stages of mask fabrication to the final stage where it is replicated in an electron image projector. The results show the pattern changes that take place, first at the electron‐beam pattern generation stage, second at the mask etching stage, and third at the mask projection stage.

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