Ion-Beam-Source Studies of Hydrogen Motion and Trapping in Silicon

This publication has 9 references indexed in Scilit:

• Real-time observations of hydrogen drift and diffusion in silicon
  Applied Physics Letters, 1988
• Hydrogen in crystalline semiconductors
  Applied Physics A, 1987
• Effect of hydrogen on shallow dopants in crystalline silicon
  Applied Physics Letters, 1987
• Defects in single-crystal silicon induced by hydrogenation
  Physical Review B, 1987
• The diffusion of hydrogen in silicon and mechanisms for “unintentional” hydrogenation during ion beam processing
  Journal of Materials Research, 1987
• Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon
  Physical Review Letters, 1986
• Electric field dependence of hydrogen neutralization of shallow-acceptor impurities in single-crystal silicon
  Applied Physics Letters, 1985
• Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated silicon
  Applied Physics Letters, 1985
• Deuterium passivation of grain-boundary dangling bonds in silicon thin films
  Applied Physics Letters, 1982